Team:Groningen/project characterisation mu lasr

From 2011.igem.org

(Difference between revisions)
Line 5: Line 5:
Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM.  
Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM.  
==Leakage of the LasR autoinducing loops==
==Leakage of the LasR autoinducing loops==
-
To estimate the autoactivation of the LasR loop through a leaky promoter we measured fluorescence of cells carrying the following constructs:
+
To estimate the autoactivation of the LasR loop through a leaky promoter we measured fluorescence of cells carrying an in- and output element ( different constructs of the LasR autoinducing loop family and :
{| class="wikitable"
{| class="wikitable"

Revision as of 23:25, 21 September 2011


LasR Autoinducing Loops

Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM.

Leakage of the LasR autoinducing loops

To estimate the autoactivation of the LasR loop through a leaky promoter we measured fluorescence of cells carrying an in- and output element ( different constructs of the LasR autoinducing loop family and :

no-tag DAS LVA
RBS 0,07 [http://partsregistry.org/wiki/index.php?title=Part:BBa_K607023 BBa_K607023] Legenda.png
RBS 0,3
RBS 0,6
RBS 1
Figure 1. Flow cytometer data obtained at different time-points during exponential growth of cells carrying different LasR autoinducing loops in presence of 100 nM HSL.