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Team:Groningen/project characterisation mu lasr
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Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM. | Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM. | ||
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==Leakiness of the LasR autoinducing loops== | ==Leakiness of the LasR autoinducing loops== | ||
Revision as of 22:12, 21 September 2011
LasR Autoinducing Loops
Our second memory unit consists of a LasR gene(Bba_C0179) driven the LasB promoter(Bba_R0079). LasR only activates transcription in the presence of HSL, this was added to the medium in a concentration of 100nM.
Leakiness of the LasR autoinducing loops
| no-tag | DAS | LVA | ||
| RBS 0,07 | | | | 
|
| RBS 0,3 | | | | |
| RBS 0,6 | | | | |
| RBS 1 | | | | |
| Figure 4. Flow cytometer data taken at different time-points during exponential growth of cells carrying different cI autoinducing loops. | ||||
